Abstract

This paper presents a theoretical and experimental analysis of the phase conversion phenomena in a power PHEMT transistor. Relationships between the linearity of the device and the intrinsic gate-source capacitance CGS, gate-drain capacitance CGD ,transconductance GM as well as the load impedance ZL ,are explained. A judicious choice of the transistor’s operating conditions allows to reduce thephaseconversion AM/PM. In the case of PHEMT devices, the behaviors of CGS,CGD,GM elements and ZL value induce internal compensation phenomena between the intrinsic non-linearities.