Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M.
(2003)
Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text available as:
Preview |
PDF
Download (294kB) | Preview |
Abstract
This paper presents a theoretical and experimental analysis of the phase conversion phenomena in a power PHEMT transistor. Relationships between the linearity of the device and the intrinsic gate-source capacitance CGS, gate-drain capacitance CGD ,transconductance GM as well as the load impedance ZL ,are explained. A judicious choice of the transistor’s operating conditions allows to reduce thephaseconversion AM/PM. In the case of PHEMT devices, the behaviors of CGS,CGD,GM elements and ZL value induce internal compensation phenomena between the intrinsic non-linearities.
Abstract