Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity

Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This paper presents a theoretical and experimental analysis of the phase conversion phenomena in a power PHEMT transistor. Relationships between the linearity of the device and the intrinsic gate-source capacitance CGS, gate-drain capacitance CGD ,transconductance GM as well as the load impedance ZL ,are explained. A judicious choice of the transistor’s operating conditions allows to reduce thephaseconversion AM/PM. In the case of PHEMT devices, the behaviors of CGS,CGD,GM elements and ZL value induce internal compensation phenomena between the intrinsic non-linearities.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Forestier, S.
Gasseling, T.
Bouysse, P.
Barataud, D.
Quere, R.
Nebus, J.M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:51
URI

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