High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Cao, Xin ; Thayne, Iain ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductance(gm ) of 1200 mS/mm and current cut-off frequency(fT ) of 300 GHz. The devices were fabricated with a novel UVIII/PMMA T-gate resist stack and a non-selective “digital” wet etch gate recess technology which results in a highly uniform, high yield sub-100 nm HEMT technology.

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