High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Cao, Xin ; Thayne, Iain ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin (2003) High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductance(gm ) of 1200 mS/mm and current cut-off frequency(fT ) of 300 GHz. The devices were fabricated with a novel UVIII/PMMA T-gate resist stack and a non-selective “digital” wet etch gate recess technology which results in a highly uniform, high yield sub-100 nm HEMT technology.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Cao, Xin
Thayne, Iain
Thoms, Stephen
Holland, Martin
Stanley, Colin
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:52
URI

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