Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs

Charbonniaud, C. ; De Meyer, S. ; Quéré, R. ; Teyssier, JP. (2003) Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

This paper presents a systematic analysis of the two kinds of traps encountered in AlGaN/GaN HEMTs. It is shown that passivation is very efficient to minimize the surface trap effects but has little effect on the buffer traps. Those ones can only be eliminated through the development of high purity substrates. Moreover thermal I-V and microwave behaviour of such transmissions is investigated through the use of a pulse-measurement system.

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