Abstract

The monolithic integration of Tunneling Diodes (TDs)with other semiconductor devices,creates novel quantum functional devices and circuits with unique properties:the Negative Differential Resistance (NDR)and the extremely low DC power consumption.In this paper we present the design,fabrication and characterization of a Self-Oscillating Mixer (SOM)based on InP-HEMT \TD technology.The circuit is based on a 2.526 GHZ VCO that draws a current of 1.3mA at 500mV and generates an output power of –21.5dBm on a 50 : load.The SOM is able to down-convert RF signals in the 2.25 –2.85 GHz band to an IF frequency in the 20-300 MHz band,with a conversion loss in the range 32-40 dB.