Sutton, William E. ; Pavlidis, Dimitris ; Lahrèche, Hacène ; Damilano, Benjamin ; Langer, Robert
(2003)
Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
The large signal characteristics of 1 Pm long S-gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed.The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively.High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz .Large signal gain and power density values of 16 dBand 1.7 W/mm for a two-finger 1x75 Pm 2 HEMT respectively were observed at 5 GHz.The device also exhibited PAE values as high as 40%with P1dB around +2.0 dBm for Class AB operation.
Abstract