Abstract

The paper proposes an approach to model a P-HEMT taking into account for the electrical-thermal- electromagnetic behavior in an effective way.The model is based on the integration of a distributed approach,which considers an intrinsic device for gate finger,each of them equipped with a thermal equivalent circuit.The latter considers also the mutual interacting between the adjacent intrinsic devices by means a voltage-controlled voltage- source that allows considering the thermal coupling by a series of coefficients determined in an analytical way.The electrical model has been extracted from a 2x150um PHEMT and then applied to predict the DC and RF characteristic of a 8x150um proving the model scalability capability.