Harmonic Distortion Characterization of SOI MOSFETs

Parvais, B. ; Cerderia, A. ; Schreurs, D. ; Raskin, J.-P. (2003) Harmonic Distortion Characterization of SOI MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text available as:
[thumbnail of G_11_04.pdf]
Preview
PDF
Download (188kB) | Preview

Abstract

Harmonic Distortion (HD) of Partially and Fully Depleted Silicon-on-Insulator nMOSFETs is investigated through DC and Radio-Frequency (RF) characterization methods. Those techniques are compared and it demonstrates that in saturation, HD is dominated by the DC current-voltage characteristics and that the output conductance has to be taken into account. Accurate evaluation of HD at RF requires further measurements.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Parvais, B.
Cerderia, A.
Schreurs, D.
Raskin, J.-P.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:53
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^