Abstract

A new modified Gummel-Poon (MGP) based model has been developed and tested on heterojunction bipolar transistors (HBTs).This paper focuses on the comparison of the new MGP and the VBIC models under DC and small-signal operations.The DC parameters of the two models are extracted from Gummel forward and reverse measurements at various junction temperatures and Ic-Vce measurements.The small-signal intrinsic elements are extracted from multi-bias s- parameter measurements.DC comparisons between the twomodel predictions and measurements reveal that the newMGP model surpasses the VBIC DC performances.The s-parameter comparisons of simulated and measurements at various bias points,from 1Ghz to 30Ghz,show that the two models are equivalent.