Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs

Issaoun, I. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Comparison of a New Modified Gummel-Poon Model and VBIC for AlGaAs/GaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

A new modified Gummel-Poon (MGP) based model has been developed and tested on heterojunction bipolar transistors (HBTs).This paper focuses on the comparison of the new MGP and the VBIC models under DC and small-signal operations.The DC parameters of the two models are extracted from Gummel forward and reverse measurements at various junction temperatures and Ic-Vce measurements.The small-signal intrinsic elements are extracted from multi-bias s- parameter measurements.DC comparisons between the twomodel predictions and measurements reveal that the newMGP model surpasses the VBIC DC performances.The s-parameter comparisons of simulated and measurements at various bias points,from 1Ghz to 30Ghz,show that the two models are equivalent.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Issaoun, I.
Dousset, D.
Kouki, A.B.
Ghannouchi, F.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:53
URI

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