InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes

Rodwell, M. ; Scott, D. ; Urteaga, M. ; Dahlström, M. ; Griffith, Z. ; Wei, Y. ; Parthasarathy, N. ; Kim, YM ; Pierson, R. ; Rowell, P. ; Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Compared to SiGe,InP HBTs offer superior electron transport but inferior scaling and parasitic reduction.Figures of merit for mixed-signal ICs are developed and HBT scaling laws for improved circuit speed are introduced.Device and circuit results are summarized, including >370 GHz f W &fmax HBTs,174 GHz amplifiers,75 GHz power amplifiers,87 GHz static frequency dividers, and 8 GHz '6 ADCs.To compete with 100 nm SiGe processes,InP must be similarly scaled.Device structures and initial results are shown for two processes intended for high-yield fabrication of low-parasitic InP HBTs at ~300 nm emitter width.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Rodwell, M.
Scott, D.
Urteaga, M.
Dahlström, M.
Griffith, Z.
Wei, Y.
Parthasarathy, N.
Kim, YM
Pierson, R.
Rowell, P.
Brar, B.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:54
URI

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