Abstract

This contribution deals with the technological realization of a special GaAs Schottky diode,based on the side-by-side technique.This is a structure,where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.We reached the value of cut-off frequency 21 GHz;this is in discrepancy with the theoretically predicted parameters.The contribution describes the technological improvements,which should lead to increase limiting frequency through the changing the structure morphology.