Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques

Wang, Guoan ; Bacon, Andrew ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (669kB) | Anteprima

Abstract

Finite Ground Coplanar (FGC)waveguide transmission lines on CMOS grade silicon wafer (U<0.01 ohm-cm)with a thick embedded silicon oxide layer have been developed using micromachining techniques.Lines with different lengths were designed,fabricated and measured.Measured attenuation and s-parameters are presented in the paper.Results show that the attenuation loss of the fabricated FGC lines is as low as 3.2 dB/cm at 40 GHz.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori