Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques

Wang, Guoan ; Bacon, Andrew ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil M. (2003) Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Finite Ground Coplanar (FGC)waveguide transmission lines on CMOS grade silicon wafer (U<0.01 ohm-cm)with a thick embedded silicon oxide layer have been developed using micromachining techniques.Lines with different lengths were designed,fabricated and measured.Measured attenuation and s-parameters are presented in the paper.Results show that the attenuation loss of the fabricated FGC lines is as low as 3.2 dB/cm at 40 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Wang, Guoan
Bacon, Andrew
Abdolvand, Reza
Ayazi, Farrokh
Papapolymerou, John
Tentzeris, Emmanouil M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:56
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