Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer

Abele, P. ; Ojefors, E. ; Schad, K.-B. ; Sonmez, E. ; Trasser, A. ; Konle, J. ; Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This paper describes the wafer level inte-gration of a differential 24 GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30 µm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna driven by the oscillator is calculated based on measurements and the result is discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Abele, P.
Ojefors, E.
Schad, K.-B.
Sonmez, E.
Trasser, A.
Konle, J.
Schumacher, H.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:56
URI

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