Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer

Abele, P. ; Ojefors, E. ; Schad, K.-B. ; Sonmez, E. ; Trasser, A. ; Konle, J. ; Schumacher, H. (2003) Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This paper describes the wafer level inte-gration of a differential 24 GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30 µm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna driven by the oscillator is calculated based on measurements and the result is discussed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Abele, P.
Ojefors, E.
Schad, K.-B.
Sonmez, E.
Trasser, A.
Konle, J.
Schumacher, H.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:56
URI

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