Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology

Seemann, Kay ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rudiger ; Schneider, Joachim ; Rießle, Markus ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In this paper, flip-chip integration is demon-stratedas a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2” SiC substrate. A proven 0 .3 µm GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Seemann, Kay
Ramberger, Suitbert
Tessmann, Axel
Quay, Rudiger
Schneider, Joachim
Rießle, Markus
Walcher, Herbert
Kuri, Michael
Kiefer, Rudolf
Schlechtweg, Michael
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:57
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