Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology

Seemann, Kay ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rudiger ; Schneider, Joachim ; Rießle, Markus ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael (2003) Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In this paper, flip-chip integration is demon-stratedas a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2” SiC substrate. A proven 0 .3 µm GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Seemann, Kay
Ramberger, Suitbert
Tessmann, Axel
Quay, Rudiger
Schneider, Joachim
Rießle, Markus
Walcher, Herbert
Kuri, Michael
Kiefer, Rudolf
Schlechtweg, Michael
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:57
URI

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