Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology

Coustou, A. ; Sie, M. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Plana, R. (2003) Frequency synthesis from 2 to 30 GHz using a 0.35 µm BiCMOS SiGe technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In this paper, we present a 10/30GHz MMIC Tripler, an X-band VCO and a frequency divider using a 0.35 µm, 60 GHz-fMAX MMIC BiCMOS SiGe technology. The Tripler exhibits a conversion gain of -5 dB and a low additive phase noise of –143dBc/Hz at a frequency offset of 100kHz is anticipated. In order to drive this Tripler, the design of a MMIC X-band VCO and its measured performance (0.8GHz tuning range, -5 dBm output power and –87dBc/Hz phase noise @ 100kHz of carrier) is also reported. This X band VCO can also drive a frequency divider, developed in the same technology. The assembling of these circuits allows the design of a 2 GHz frequency synthesizer. Measurements have shown a phase noise of -99dBc/ Hz at a frequency offset of 100kHz. Therefore, this paper demonstrates the great capabilities of BiCMOS SiGe MMIC technology about frequency synthesis ranging from 2GHz to 30GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Coustou, A.
Sie, M.
Dubuc, D.
Graffeuil, J.
Tournier, E.
Llopis, O.
Plana, R.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:57
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