Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication

Edgar, David L. ; Chen, Yifang ; McEwan, Fiona ; McLelland, Hellen ; Boyd, E. ; Moran, David ; Thoms, Stephen ; Macintyre, Douglas ; Elgaid, K. ; Cao, Xin ; Stanley, Colin ; Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

We report the first mm-wave measurements for lattice-matched InP HEMTS with 70 nm T-gates made using a UVIII/PMMA bilayer resist. The measured DC gate resistance was 340 Ω/mm, while the extrapolated fT of the 70 nm device was ~300 GHz for a 2x50 µm width device.

Abstract

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Documento relativo ad un convegno o altro evento (Atto)

Autori

Autore	Affiliazione	ORCID
Edgar, David L.
Chen, Yifang
McEwan, Fiona
McLelland, Hellen
Boyd, E.
Moran, David
Thoms, Stephen
Macintyre, Douglas
Elgaid, K.
Cao, Xin
Stanley, Colin
Thayne, Iain