Nonlinear Modeling of Si/SiGe HBT Using ANN

Taher, H. ; Schreurs, D. ; Vestiel, E. ; Gillon, R. ; Nauwelaers, B. (2004) Nonlinear Modeling of Si/SiGe HBT Using ANN. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

We present a large signal model for Si/SiGe HBTs using an Artificial Neural Network (ANN). The ANN is used to model the DC non-linearities of the intrinsic device. In this way, physical phenomena such as nonideal leakage currents and the Kirk effect can be modeled without time-consuming extraction. Capacitive nonlinearities are modeled by the well-known relationship between the capacitance and the junction voltage, ignoring the diffusion capacitance. By comparing ANN model results to measurements, we show that a good agreement for DC and nonlinear characteristics is obtained.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Taher, H.
Schreurs, D.
Vestiel, E.
Gillon, R.
Nauwelaers, B.
Subjects
DOI
Deposit date
07 Jun 2005
Last modified
17 Feb 2016 14:08
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