Taher, H. ; Schreurs, D. ; Vestiel, E. ; Gillon, R. ; Nauwelaers, B.
(2004)
Nonlinear Modeling of Si/SiGe HBT Using ANN.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
We present a large signal model for Si/SiGe HBTs using an Artificial Neural Network (ANN). The ANN is used to model the DC non-linearities of the intrinsic device. In this way, physical phenomena such as nonideal leakage currents and the Kirk effect can be modeled without time-consuming extraction. Capacitive nonlinearities are modeled by the well-known relationship between the capacitance and the junction voltage, ignoring the diffusion capacitance. By comparing ANN model results to measurements, we show that a good agreement for DC and nonlinear characteristics is obtained.
Abstract