Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs

Elkhou, M. ; Rousseau, M. ; Gerard, H. ; De Jaeger, J.C. (2004) Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Conference or Workshop Item (Paper)
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Elkhou, M.
Rousseau, M.
Gerard, H.
De Jaeger, J.C.
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07 Jun 2005
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17 Feb 2016 14:08
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