Elkhou, M. ; Rousseau, M. ; Gerard, H. ; De Jaeger, J.C.
(2004)
Physical analysis of the breakdown phenomenon between sigle or double step gate recess HEMTs.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
Preview |
PDF
Download (998kB) | Preview |