Analysis of Drain Lag and Power Compression in GaN MESFET

Horio, K. ; Yonemoto, K. (2004) Analysis of Drain Lag and Power Compression in GaN MESFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Two-dimensional transient simulation of a GaN MESFET is performed in which deep levels in a semiinsulating buffer layer is considered. It is shown that the drain voltage VD is raised, the drain current overshoot the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called power compression in the GaN MESFET.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Horio, K.
Yonemoto, K.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:09
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