Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

Matiss, A. ; Janssen, G. ; Bertenburg, R. M. ; Brockerhoff, W. ; Tegude, F.J. (2004) Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect to the noise behaviour. Different circuits have been simulated and an amplifier design is presented that best fits the requirements for high optical sensitivity.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Matiss, A.
Janssen, G.
Bertenburg, R. M.
Brockerhoff, W.
Tegude, F.J.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:09
URI

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