Parvais, B. ; Raskin, J.P.
(2004)
Analytical Expressions for Distortion of SOI
MOSFETs using the Volterra Series 3D.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of the Wiener-Volterra series. Simple relationships are given and validated through Large-Signal Network Analyser measurements. The simplicity of the formulation makes it attractive to circuit designers. Furthermore, it may be used to determine the validity range of low-frequency based distortion characterization techniques. It is shown that the dominant poles of the HD for a 0.25 µm Partially Depleted SOI MOSFET lies at a few GHz, depending on the load impedance and the biasing and that its IMD3 depends on the tone separation.
Abstract