Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series 3D

Parvais, B. ; Raskin, J.P. (2004) Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series 3D. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of the Wiener-Volterra series. Simple relationships are given and validated through Large-Signal Network Analyser measurements. The simplicity of the formulation makes it attractive to circuit designers. Furthermore, it may be used to determine the validity range of low-frequency based distortion characterization techniques. It is shown that the dominant poles of the HD for a 0.25 µm Partially Depleted SOI MOSFET lies at a few GHz, depending on the load impedance and the biasing and that its IMD3 depends on the tone separation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Parvais, B.
Raskin, J.P.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:09
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