Abstract

High performances was achieved on AlGaN/GaN HEMTs based on Si(111). Devices with 0.17-µm and 0.3-µm gate lengths are fabricated on two different layer growth at TIGER laboratory. RF noise and power performances are carried out on these transistors. The 0.17 x 100 µm2 devices exhibit a unity current gain cutoff frequency (ft) of 46 GHz, and a maximum frequency (fmax) of 92 GHz at VDS = 10 V. Also, a minimum noise figure (NFmin) of 1.1 dB and an available associated gain (Gass) of 12 dB are obtained at VDS = 10 V and f = 10 GHz. The 0.3 300 µm2 devices demonstrate a drain-to-source current density Ids = 925 mA/mm at VGS = 0 V and a maximum extrinsic transconductance (Gm) of 250 mS/mm. Furthermore, a high output power density of 1.9 W/mm associated to a PAE of 18% and a linear gain of 16 dB are measured at f = 10 GHz and VDS = 30 V. These performances are the best ever reported for AlGaN/GaN HEMTs based on silicon substrates at this frequency.