A new non-quasi-static non-linear MOSFET model based on physical analysis

Burke, Darren R. ; Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The model is based on a set of simplified transport equations for the conducting channel in a MOSFET. These equations incorporate non-quasi-static (NQS) effects due to the inclusion of time derivatives, and describe the semiconductor dynamics in terms of coupled particle and displacement currents leading to a description in terms of a relatively small number of nonlinear differential equations. Thus, internal device behaviour can be accurately modelled. A new method of modelling the charge density in the channel has also been developed in the form of a single expression that describes the charge under the Gate for any biasing conditions. The new model has a low empirical content, and is fully continuous over all operating regions.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Burke, Darren R.
Brazil, Thomas J.
Settori scientifico-disciplinari
DOI
Data di deposito
01 Dic 2005
Ultima modifica
17 Feb 2016 14:17
URI

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