Abstract

This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The model is based on a set of simplified transport equations for the conducting channel in a MOSFET. These equations incorporate non-quasi-static (NQS) effects due to the inclusion of time derivatives, and describe the semiconductor dynamics in terms of coupled particle and displacement currents leading to a description in terms of a relatively small number of nonlinear differential equations. Thus, internal device behaviour can be accurately modelled. A new method of modelling the charge density in the channel has also been developed in the form of a single expression that describes the charge under the Gate for any biasing conditions. The new model has a low empirical content, and is fully continuous over all operating regions.