Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies

Zoschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, K. ; Bock, Josef ; Meister, T.F. ; Wurzer, Martin ; Wohlmuth, Hans-Dieter ; Scholtz, Arpad L. (2000) Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evaluated by theory and by ex- perimental LNAs designed for the frequen- cies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Zoschg, Dietmar
Wilhelm, Wilhelm
Knapp, Herbert
Aufinger, K.
Bock, Josef
Meister, T.F.
Wurzer, Martin
Wohlmuth, Hans-Dieter
Scholtz, Arpad L.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:44
URI

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