Login per gli autori
Zoschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, K. ; Bock, Josef ; Meister, T.F. ; Wurzer, Martin ; Wohlmuth, Hans-Dieter ; Scholtz, Arpad L.
(2000)
Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
Anteprima |
Documento PDF
Download (580kB) | Anteprima |
Abstract
The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evaluated by theory and by ex- perimental LNAs designed for the frequen- cies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.
Abstract
Altri metadati
Statistica sui download
Statistica sui download
Gestione del documento:
