Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs

Sozzi, G. ; Dieci, D. ; Menozzi, R. ; Lanzieri, C. ; Tomasi, T. ; Canali, C. (1999) Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

This work investigates, through the use of numerical drift-diffusion simulations, the hot electron degradation mechanisms of power AlGaAs/GaAs HFETs. The experimentally observed degradation modes can be consistently explained by a negative charge storage at the device surface over the gate-drain access region.

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