Abstract

The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate. These results are very promising because the devices have not been passivated, and no T gate has been achieved. Moreover, planar technology offers the advantage of a better reliability. At present time, it is the best power result obtained with an isolation by argon implantation.