Performances of AlGaN/GaN HEMTs in Planar Technology

Werquin, M. ; Vellas, N. ; Guhel, Y. ; Ducatteau, D. ; Boudart, B. ; Pesant, J.C. ; Bougrioua, Z. ; Germain, M. ; De Jaeger, J.C. ; Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate. These results are very promising because the devices have not been passivated, and no T gate has been achieved. Moreover, planar technology offers the advantage of a better reliability. At present time, it is the best power result obtained with an isolation by argon implantation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Werquin, M.
Vellas, N.
Guhel, Y.
Ducatteau, D.
Boudart, B.
Pesant, J.C.
Bougrioua, Z.
Germain, M.
De Jaeger, J.C.
Gaquière, C.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:12
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