Distortion Characterization and Neural Network Modeling for Microwave Devices

Giannini, F. ; Colantonio, P. ; Orengo, G. ; Serino, A. (2004) Distortion Characterization and Neural Network Modeling for Microwave Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A new method for characterization of HEMT distortion parameters, which extracts the coefficents of Taylor series expansion of Ids(Vgs,Vds), including all crossterms, from low-frequency harmonic measurements, has been developed. The extracted parameters will be used either in a Volterra series model around a fixed bias point for third order characterization of small-signal Ids nonlinearity, and in a large-signal model of Ids characteristic, where its partial derivatives have been locally characterized up to the third order in the whole bias region, using a novel neural network representation. The two models have been verified by harmonic measurements on a AMS HEMT at 5 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Giannini, F.
Colantonio, P.
Orengo, G.
Serino, A.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:13
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