Abstract

This paper deals with the identification of equivalent circuit models for strongly nonlinear devices by taking advantage of the so-called “Vectorial Large-Signal Measurements”. A very specific device, the Heterojunction Interband Tunneling FET (HITFET), has been selected as case of study for its peculiar nonlinear behavior. A comprehensive description of the identification is given along with a number of experimental results. In particular, the comparison between simulated and measured data for different power levels and frequencies from the set adopted during the identification confirms the extrapolation capability of the approach.