Cremonini, A. ; Carbonaro, L. ; Mariotti, S. ; Natale, V. ; Nesti, R. ; Orfei, S. ; Roda, J. ; Tofani, G.
(2004)
Indium Phosphide MMIC Low Noise Amplifier and
related cryogenically applications in a
Radioastronomical Focal Plane Array Receiver.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
We will present realisations of MMIC Low
Noise amplifiers designed to operate in a cryogenic
environment, working from 18 to 26 GHz. These devices
have been produced with the intent to be installed in a five
beams feed array receiver, realised to improve the single dish
survey and VLBI performances of the 32m diameter
parabolic dish antenna of the Medicina Radioastronomical
Station, near Bologna, in Italy. The entire project named
FARADAY has been developed in the FP-5 context
supported by EU. Many efforts has been concentrated to
produce devices with the best compromise between lowest
noise, flat gain, and good input matching. For this device,
MMIC 0,1 um gate length InP HEMT process has been
used. We will start the work description from the design
specification to the on wafer devices measurements. We will
also introduce our packaging material investigations in
order to have a reliable working device at cryogenic
temperature. Packaging device efforts has been devoted also
to realise a modular carrier that let the choice between
coaxial and waveguide interface.
Abstract
We will present realisations of MMIC Low
Noise amplifiers designed to operate in a cryogenic
environment, working from 18 to 26 GHz. These devices
have been produced with the intent to be installed in a five
beams feed array receiver, realised to improve the single dish
survey and VLBI performances of the 32m diameter
parabolic dish antenna of the Medicina Radioastronomical
Station, near Bologna, in Italy. The entire project named
FARADAY has been developed in the FP-5 context
supported by EU. Many efforts has been concentrated to
produce devices with the best compromise between lowest
noise, flat gain, and good input matching. For this device,
MMIC 0,1 um gate length InP HEMT process has been
used. We will start the work description from the design
specification to the on wafer devices measurements. We will
also introduce our packaging material investigations in
order to have a reliable working device at cryogenic
temperature. Packaging device efforts has been devoted also
to realise a modular carrier that let the choice between
coaxial and waveguide interface.
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:14
URI
Altri metadati
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:14
URI
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