Magnee, P. H. C. ; Hurkx, G. A. M. ; Agarwal, P. ; van Noort, W. D. ; Donkers, J. J. T. M. ; Melai, J. ; Aksen, E. ; Vanhoucke, T. ; Vijayaraghavan, M. N.
(2004)
SiGe:C HBT technology for advanced BiCMOS
processes.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
Preview |
PDF
Download (378kB) | Preview |
Abstract
In this paper we discuss the present status of SiGe:C heterojunction bipolar transistors (HBTs), together with some Figures-of-Merit (FOMs) and their relation to technology. We also discuss new innovative solutions to the relatively low breakdown voltage and high-frequency substrate losses of Si technologies, when compared to III-V based technologies.
Abstract
Other metadata
Downloads
Downloads
Staff only:
