Larson, Lawrence E.
(2004)
SiGe HBT BiCMOS Technology as an Enabler for
Next Generation Communications Systems.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
The rapid deployment of next generation wireless communications systems creates a unique opportunity for the semiconductor industry. High-speed communications networks require massive digital computing power along with analog and radio frequency devices with wide dynamic range and bandwidth. CMOS technology increasingly forms the technological basis for these developments. This raises the question of the appropriate future role of “non-standard” technologies like Si/SiGe BiCMOS. This paper will summarize the unique advantages of Si/SiGe technology in future wireless communications systems.
Abstract