A new non-quasi-static non-linear MOSFET model based on physical analysis

Burke, Darren R. ; Brazil, Thomas J. (2005) A new non-quasi-static non-linear MOSFET model based on physical analysis. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The model is based on a set of simplified transport equations for the conducting channel in a MOSFET. These equations incorporate non-quasi-static (NQS) effects due to the inclusion of time derivatives, and describe the semiconductor dynamics in terms of coupled particle and displacement currents leading to a description in terms of a relatively small number of nonlinear differential equations. Thus, internal device behaviour can be accurately modelled. A new method of modelling the charge density in the channel has also been developed in the form of a single expression that describes the charge under the Gate for any biasing conditions. The new model has a low empirical content, and is fully continuous over all operating regions.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Burke, Darren R.
Brazil, Thomas J.
Subjects
DOI
Deposit date
01 Dec 2005
Last modified
17 Feb 2016 14:17
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