A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching

Bakalski, W. ; Vasylyev, Andriy ; Simburger, Werner ; Kall, Marcus ; Schmid, Alfons ; Kitlinski, Krzysztof (2005) A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (269kB) | Anteprima

Abstract

A fully integrated 4.8-6 GHz Wireless LAN SiGebipolar power amplifier chip requiring no external components was realized using the small die size of only 1x0.9 mm2. At 1V to 2.4V, the maximum out put power level is 19 dBm (22%PAE) to 26.3 dBm(28.5%PAE) at 5.25GHz with a maximum small signal gain of 33 dB. The maximum average out put power for a maximum 3%Error Vector Magnitude (EVM)is 16 dBm.The PA survives a VSWR of 50.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori