Small-signal and noise two-dimensional modeling of submicrometer high speed bipolar transistor

Rinaudo, S. ; Privitera, G. ; Ferla, G. ; Galluzzo, A. (1997) Small-signal and noise two-dimensional modeling of submicrometer high speed bipolar transistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (1MB) | Anteprima

Abstract

In the first part of the paper, the Y matrix representation is used to directly and accurately extract all the parameters of the --hybrid model. In the second part the noise sources are added to the equivalent model and the analytical expression of noise figure is obtained. This expression is used to get a full set of noise parameters to characterize the behaviour of the bipolar microwave transistors from numerical simulation.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori