Ultra high IP3 passive GaAs FET mixers

Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Wentzel, Andreas
Pienkowski, Dariusz
Boeck, Georg
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:21
URI

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