Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg
(2005)
Ultra high IP3 passive GaAs FET mixers.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text disponibile come:
Anteprima |
Documento PDF
Download (836kB) | Anteprima |
Abstract
This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.
Abstract