Ultra high IP3 passive GaAs FET mixers

Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Wentzel, Andreas
Pienkowski, Dariusz
Boeck, Georg
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:21
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