Ultra high IP3 passive GaAs FET mixers

Wentzel, Andreas ; Pienkowski, Dariusz ; Boeck, Georg (2005) Ultra high IP3 passive GaAs FET mixers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lower GHz range. The mixers achieve conversion losses of about 7 dB and input third-order intercept points (IIP3) of up to 44 dBm. Port isolation values of more than 70 dB have been achieved. Different balancing topologies, design process and results are being discussed.

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