Abstract

Large-signal modelling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different non-linear modelling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria to identify which model (between those available) could be the most suitable for thedesired application. Moreover, similar strategies are needed even from the research groups,whose activity is devoted to the model identification and extraction, in order to quantifythe degree of accuracy achievable by the modelling approach adopted.In this paper an approach to verifylarge-signal model accuracy will be discussed, which is simplybased on the comparison between de-embedded measurements and model predictionsofY-parameters versus the bias voltages at the intrinsic device ports.