Abstract

Design and realisation of two complex L-Band UP-convcrtcrs in GaAs technology is presented. This paper describes the architectures chosen for both devices and will focus on the design techniques that should be adopted when RF signals, with different power levels and/or at different frequencies, must meet on the same chip without mutual interferences. The paper will also focus on the electrical modelling of large IC packages for digital VLSI IC's to be used at L-band frequencies. In the cases herein described, low cost and high volume production are not mandatory, while high performance, very high yields, multifunctions on chip, no needs of external interfaces and tuning components, freehold property of the devices and fast and reliable circuit design are the requirements.