Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers

De Jaeger, J.C. ; Delage, S. L. ; Dambrine, G. ; Di Forte Poisson, M.A ; Hoel, V. ; Lepilliet, S. ; Grimbert, B. ; Morvan, E. ; Mancuso, Y. ; Gauthier, G. ; Lefrançois, A. ; Cordier, Y. (2005) Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (246kB) | Anteprima

Abstract

This study regards the low noise properties of X-bandGaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown onSiC or Si substrates. The HEMTs present very low noise properties with NFmin and Gass close to 1 dB and 13 dB at 12GHz. The robustness testsshow that the component withstands power level up to 34 dBm. A two-stages X-bandLNA is fabricated showing a noise figure of 1.7 dB with a gain of 20 dB at 10 GHz.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori

Autore	Affiliazione	ORCID
De Jaeger, J.C.
Delage, S. L.
Dambrine, G.
Di Forte Poisson, M.A
Hoel, V.
Lepilliet, S.
Grimbert, B.
Morvan, E.
Mancuso, Y.
Gauthier, G.
Lefrançois, A.
Cordier, Y.