Scaling of GaInP/GaAs HBT equivalent-circuit elements

Rudolph, M. ; Doerner, R. ; Richter, E. ; Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

In this paper, GalnP/GaAs HBT's equivalent-circuit elements are investigated with respect to their dependence on layout geome-try. A large number of extracted parameters for HBT's of different layouts is given, as well as simple formulas, relating the element values with properties of the layout. The results are useful for large-signal modeling and layout optimization.

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