Abstract

We present a complete fabrication process and measured results for InP based HEMTs and MMICs. A major effort has been focused on the development of new and reliable gate and via-hole process both for InP based HEMTs and MMICs. A single exposure is required to define both the footprint and the head of the T-gate by modulation of the exposure doses. The developed gate and via-hole process is reliable and suitable for volume production of InP-HEMTs and MMICs with high yield. A complete MMIC chip includes mesa resistors, microstrip transmission lines, HEMT transistors, and ground via holes. A cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 200 GHz was obtained from 0.1 um gate lattice matched AlInAs/GaInAs/InP based HEMTs.