Nawaz, M. ; Persson, S. H. M. ; Zirath, H. ; Choumas, E. ; Mellberg, A. ; Kollberg, E. L.
(1999)
A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
We present a complete fabrication process and measured results for InP based HEMTs and MMICs. A major effort has been focused on the development of new and reliable gate and via-hole process both for InP based HEMTs and MMICs. A single exposure is required to define both the footprint and the head of the T-gate by modulation of the exposure doses. The developed gate and via-hole process is reliable and suitable for volume production of InP-HEMTs and MMICs with high yield. A complete MMIC chip includes mesa resistors, microstrip transmission lines, HEMT transistors, and ground via holes. A cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 200 GHz was obtained from 0.1 um gate lattice matched AlInAs/GaInAs/InP based HEMTs.
Abstract
We present a complete fabrication process and measured results for InP based HEMTs and MMICs. A major effort has been focused on the development of new and reliable gate and via-hole process both for InP based HEMTs and MMICs. A single exposure is required to define both the footprint and the head of the T-gate by modulation of the exposure doses. The developed gate and via-hole process is reliable and suitable for volume production of InP-HEMTs and MMICs with high yield. A complete MMIC chip includes mesa resistors, microstrip transmission lines, HEMT transistors, and ground via holes. A cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 200 GHz was obtained from 0.1 um gate lattice matched AlInAs/GaInAs/InP based HEMTs.
Document type
Conference or Workshop Item
(Paper)
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Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
URI
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
URI
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