Abstract

A theoretical model is developed for LT-GaAs and LT-Al0.3Ga0.7As MISFETs and is compared with experimental data. This model is based upon the analytical solution of Poisson's equation, the current continuity equation and the Chang-Fetterman velocity-field equation. When the device is operating in the linear region and knee region the one-dimensional Poisson equation has been considered. When the device is in the saturation regime, the two-dimensional Poisson equation has been solved analytically. The resulting output current-voltage characteristics are in excellent agreement with experimental data.